Machine Open Level, Open people, Training times
A級:開放給需要使用之學生,經訓練考核後可自行操作。
Level A:General user. The general users can operate the equipment themselves after both training and qualifying.
B級:每位教授指派一位學生申請訓練,該教授之其他學生需由接受訓練的學生代為操作,若有教授使用該儀器之學生過多者,可向儀器負責人申請增加接受訓練學生人數。
Level B:Advanced user. Each professor can assign one student to use the equipment for their group. If necessary, more advent users can be assigned with special application by the professor.
C級:由儀器負責人選定教授推薦之學生若干人接受訓練,經考核後可自行操作儀器並得負責委託服務工作。
Level C:Specific user. Some recommended students often training and qualifying can operate the equipment to work and help service for other researchers.
D級:由本實驗室之技術人員接受委託服務,不開放使用。
Level D:Technician. Only the technician can run the equipment for service.
**每個實驗室申請自行操作之人數限制(奈米中心保有隨時變更人數限制的權利)**
開放等級 Open Level | 設備中文名稱 Machine (Chinese language) | 校內人數限制 Open people (intramural) | 校外人數限制 Open people (outside the school) | 儀器訓練次數 Training times |
---|---|---|---|---|
A | 濕式工作台 Wet Bench | 不限 (without limit) | 不限 (without limit) | 最少1次 (At least once) |
A | 光罩對準曝光機 (用此機台需同時加考光阻塗佈機、真空烤箱、光學顯微鏡) Mask Aligner (Include:Photo Resist Spinner, Vacuum Oven, Optical Microscope) | 不限 (without limit) | 不限 (without limit) | 最少3次 (At least 3 times) |
A | 雙面光罩對準曝光機(用此機台需同時加考光阻塗佈機、真空烤箱、光學顯微鏡) Double Side Mask Aligner (Include:Photo Resist Spinner, Vacuum Oven, Optical Microscope) | 不限 (without limit) | 3人 | 最少3次 (At least 3 times) |
A | 氧化擴散系統 Oxidation & Diffusion Furnaces | 不限 (without limit) | 3人 | 最少1次 (At least once) |
A | 低壓化學氣相沉積系統 Low Pressure Chemical Vapor Deposition System | 不限 (without limit) | 3人 | 最少1次 (At least once) |
A | 熱阻絲蒸鍍系統 Thermal Evaporation Coater | 不限 (without limit) | 3人 | 最少1次 (At least once) |
A | 雙電子槍蒸鍍系統A Dual E-Gun Evaporation System(A) | 不限 (without limit) | 3人 | 最少1次 (At least once) |
A | 雙電子槍蒸鍍系統B Dual E-Gun (B) | 不限 (without limit) | 3人 | 最少3次 (At least 3 times) |
A | 真空濺鍍系統A Sputtering System (A) | 不限 (without limit) | 3人 | 最少2次 (At least 2 times) |
A | 真空濺鍍系統B Sputtering System (B) | 不限 (without limit) | 3人 | 最少2次 (At least 2 times) |
A | 高真空鍍膜系統 High Vacuum Deposition System | 不限 (without limit) | 3人 | 最少3次 (At least 3 times) |
A | 橢圓測試儀 Ellipsometer | 不限 (without limit) | 3人 | 最少3次 (At least 3 times) |
A | 電漿輔助化學氣相沉積系統A Plasma-Enhanced Chemical Vapor Deposition, PECVD-A | 不限 (without limit) | 3人 | 最少1次 (At least once) |
A | 電漿輔助化學氣相沉積系統B Plasma-Enhanced Chemical Vapor Deposition, PECVD-B | 不限 (without limit) | 3人 | 最少1次 (At least once) |
A | 複晶矽活性離子蝕刻系統 Poly-Si Reactive Ion Etching System, Poly-Si RI | 不限 (without limit) | 3人 | 最少3次 (At least 3 times) |
A | 高密度活性離子蝕刻系統 High Density Plasma Reactive Ion Etching System, HDP-RIE | 不限 (without limit) | 3人 | 最少3次 (At least 3 times) |
A | 多腔體電漿蝕刻系統 Multi-Chamber Plasma Etching System, P5000E | 不限 (without limit) | 3人 | 最少3次 (At least 3 times) |
A | 冷場發射掃描式電子顯微鏡暨能量散佈分析儀器(SEM SU-8010) Cold Field Emission Scanning Electron Microscope (Hitachi SU8010) & Energy Dispersive Spectrometer | 不限 (without limit) | 3人 | 最少3次 (At least 3 times) |
A | 原子層化學氣相沉積系統 Atomic Layer Chemical Vapor Deposition System, ALD | 不限 (without limit) | 3人 | 最少3次 (At least 3 times) |
A | 原子層化學氣相沉積系統 Atomic Layer Deposition System,Picosun-ALD | 不限 (without limit) | 3人 | 最少3次 (At least 3 times) |
A | 全光譜反射式膜厚量測儀 Reflectometer | 不限 (without limit) | 3人 | 最少1次 (At least once) |
A | 介電薄膜活性離子蝕刻系統 A Dielectric Materials Reactive Ion Etching System, RIE-400iP | 不限 (without limit) | 3人 | 最少3次 (At least 3 times) |
A | 介電薄膜活性離子蝕刻系統 B Dielectric Materials Reactive Ion Etching System, RIE 200L | 不限 (without limit) | 3人 | 最少3次 (At least 3 times) |
A | 矽深蝕刻系統 Si Deep-RIE | 不限 (without limit) | 3人 | 最少3次 (At least 3 times) |
A | 高解析度場發射掃描電子顯微鏡暨能量散佈分析儀(SEM S-4700I) High-Resolution Cold Field Emission Scanning Electron Microscope & Energy Dispersive Spectrometer, SEM, EDS | 不限 (without limit) | 不開放 (nonopen) | 最少3次 (At least 3 times) |
A | 四點探針 4-point Probe | 不限 (without limit) | 不限 (without limit) | 最少1次 (At least 1 times) |
A | 探針式輪廓儀 Dektak XT | 不限 (without limit) | 不限 (without limit) | 最少3次 (At least 3 times) |
A | 快速退火系統 Rapid Temperture Annealing, RTA | 2人 | 2人 | 最1少次 (At least once) |
C | 圖形產生系統 Pattern Generator | 3人 | 3人 | 最少6次 (At least 6 times) |
C | 聚焦離子束與電子束顯微系統 Dual beam [focused ion beam & electron beam] System, FIB | 2人 | 不開放 (nonopen) | 最少8次 (At least 8 times) |
C | 光罩複製機 Mask Aligner | 不限 (without limit) | 不開放 (nonopen) | |
D | 雷射光罩製作系統 Ⅱ(DWL-200) Laser Pattern Generator, DWL-200 | 不開放 (nonopen) | 不開放 (nonopen) |